Aluminium nitride ceramic substrate

Aluminium nitride ceramic substrate with high thermal conductivity and electrical insulation properties, they are advanced ceramic material that is widely used in the electronics industry.

Features of aluminium nitride ceramic substrate:

1.Good dielectric properties.

2.High thermal conductivity.

3.Low thermal expansion coefficient, close to that of Silicon.

Mechanical proferties:

※Density: 3.24g/cm3

※ 20℃Thermal conductivity: 195W/m·k

※Flexural strength: 350Mpa

※Distortion:2.5‰

※ [RT-300℃]10-6mm/℃ Coefficient of linear expansion: 4.6

※ Dielectric strength: 20KV/mm

※20 °C volume resistance :10¹³

Production process:

Application:

※High-temperature heating elements

※Electronic package substrate

※Piezoelectric device applications

Aluminum nitride has high resistivity, high thermal conductivity (8-10 times that of Al2O3), and a low coefficient of expansion similar to that of silicon,

making it an ideal material for high-temperature and high-power electronic devices.

※Ball valves, pump bodies, sealing rings, filters, heat exchanger components and immobilized catalyst carriers, combustion boats, evaporation dishes.

※Semiconductor parts

※Electronic Equipment

※Lining

※Laser thermal management components